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Achieve the ultimate read/write performance to maximize your everyday computing experience with Samsung's TurboWrite technology. You not only obtain more than a 10% better user experience but up to 1.9x faster random write speeds. The 850 EVO delivers the top of its class performance in sequential read and write speeds. Plus, you also gain optimized random performance in all QD for client PC usage scenario.
Samsung's Magician software which provides rapid mode for 2x faster processing data speeds on a system level by utilizing unused PC memory (DRAM) as cache storage. The Magician increased the maximum memory usage in rapid mode. You also get a 2x performance boost in all random queue depth.
The 850 EVO delivers significantly longer battery life on your notebook with a controller optimized for 3D V-NAND now enabling device sleep at a highly efficiency. The 850 EVO is now 25% more power efficient during write operations thanks to 3D V-NAND only consuming half the energy than that of planar 2D NAND.
Product Description | Samsung 850 EVO MZ-N5E500BW - solid state drive - 500 GB - SATA 6Gb/s | Type | Solid state drive - internal | Capacity | 500 GB | Hardware Encryption | Yes | NAND Flash Memory Type | Triple-level cell (TLC) | Form Factor | M.2 2280 | Interface | SATA 6Gb/s | Data Transfer Rate | 600 MBps | Buffer Size | 512 MB | Features | Hardware Full Disk Encryption (FDE), TRIM support, DevSleep mode, Microsoft eDrive compatible, 3D V-NAND Technology, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, Worldwide Name (WWN), RAPID mode support, TurboWrite Technology, Samsung MGX Controller, S.M.A.R.T., 256-bit AES, IEEE 1667 | Dimensions (WxDxH) | 22.1 mm x 80.3 mm x 1.52 mm | Manufacturer Warranty | 5-year warranty |
General | |
Device Type | Solid state drive - internal |
Capacity | 500 GB |
Hardware Encryption | Yes |
NAND Flash Memory Type | Triple-level cell (TLC) |
Form Factor | M.2 2280 |
Interface | SATA 6Gb/s |
Buffer Size | 512 MB |
Features | Hardware Full Disk Encryption (FDE), TRIM support, DevSleep mode, Microsoft eDrive compatible, 3D V-NAND Technology, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, Worldwide Name (WWN), RAPID mode support, TurboWrite Technology, Samsung MGX Controller, S.M.A.R.T., 256-bit AES, IEEE 1667 |
Width | 22.1 mm |
Depth | 80.3 mm |
Height | 1.52 mm |
Performance | |
SSD Endurance | 150 TB |
Drive Transfer Rate | 600 MBps (external) |
Internal Data Rate | 540 MBps (read) / 500 MBps (write) |
Maximum 4KB Random Write | 89000 IOPS |
Reliability | |
MTBF | 1,500,000 hours |
Expansion & Connectivity | |
Interfaces | 1 x SATA 6 Gb/s - M.2 Card |
Compatible Bay | M.2 2280 |
Power | |
Power Consumption | 50 mW (active) , 3.5 Watt (average) , 4.7 Watt (maximum) , 2 mW (sleep) |
Software & System Requirements | |
Software Included | Samsung Magician Software, Samsung Data Migration |
Manufacturer Warranty | |
Service & Support | Limited warranty - 5 years |
Environmental Parameters | |
Min Operating Temperature | 0 °C |
Max Operating Temperature | 70 °C |
Shock Tolerance (non-operating) | 1500 g @ 0.5 ms half-sine pulse |
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